1 CCS020M12CM2 1.2kv, 80 m? silicon carbide six-pack (three phase) module c2m mosfet and z-rec ? diode dat asheet : CCS020M12CM2,rev. - features ? ultra low loss ? high-frequency operation ? zero reverse recovery current from diode ? zero turn-off tail current from mosfet ? normally-off, fail-safe device operation ? ease of paralleling ? copper baseplate and aluminum nitride insulator system benefts ? enables compact and lightweight systems ? high effciency operation ? mitigates over-voltage protection ? reduced thermal requirements ? reduced system cost applications ? solar inverter ? 3-phase pfc ? regen drive ? ups and smps ? motor drive package part number package marking CCS020M12CM2 six-pack CCS020M12CM2 v ds 1.2 kv e sw, total @ 20a, 150 ?c 0.48 mj r ds(o n) 80 m? maximum ratings (t c = 25?c unless otherwise specifed) symbol parameter value unit test conditions notes v dsmax drain - source voltage 1.2 kv v gsmax gate - source voltage -10/+25 v absolute maximum values v gsop gate - source voltage -5/20 v recommended operational values i d continuous mosfet drain current 29.5 a v gs = 20 v, t c = 25 ?c fig. 25 20 v gs = 20 v, t c = 90 ?c i d(pulse) pulsed drain current 80 a pulse width tp limited by t j(max) i f continuous diode forward current 46 a v gs = -5 v, t c = 25 ?c 27 v gs = -5 v, t c = 90 ?c t jmax junction temperature -40 to +150 ?c t c ,t stg case and storage temperature range -40 to +125 ?c v isol case isolation voltage 4.5 kv ac, 50 hz , 1 min l stray stray inductance 30 nh measured between terminals 25, 26 and 27, 28 p d power dissipation 167 w t c = 25 ? c, t j = 150 ?c fig. 26 subject to change without notice. www.cree.com
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain - source breakdown voltage 1.2 kv v gs, = 0 v, i d = 100 a v gs(th) gate threshold voltage 1.7 2.2 v v ds = 10 v , i d = 1 ma fig. 7 1.6 v ds = 10 v , i d = 1 ma, t j = 150 ? c i dss zero gate voltage drain current 1 100 a v ds = 1.2 kv, v gs = 0v i dss zero gate voltage drain current 10 250 a v ds = 1.2 kv, v gs = 0v, t j = 150 ? c i gss gate-source leakage current 1 250 na v gs = 20 v, v ds = 0v r ds(on) on state resistance 80 98 m? v gs = 20 v, i ds = 20 a fig. 4-6 145 208 v gs = 20 v, i ds = 20 a , t j = 150 ? c g fs transconductance 9.8 s v ds = 20 v , i ds = 20 a fig. 8 8.5 v ds = 20 v , i d = 20 a, t j = 150 ? c c iss input capacitance 900 pf v ds = 800 v, f = 1 mhz, v ac = 25 mv fig. 16,17 c oss output capacitance 181 c rss reverse transfer capacitance 5.9 e on turn-on switching energy 0.41 mj v dd = 800 v, v gs = -5v/+20v i d = 20 a, r g(ext) = 2.5 load = 412 h, t j = 150 ? c note: iec 60747-8-4 defnitions fig. 22 e off turn-off switching energy 0.07 mj r g (int) internal gate resistance 3.8 ? f = 1 mhz, v ac = 25 mv q gs gate-source charge 16.1 nc v dd = 800 v, v gs = -5v/+20v, i d = 20 a, per jedec24 pg 27 fig. 15 q gd gate-drain charge 20.7 q g total gate charge 61.5 t d(on) turn-on delay time 10 ns v dd = 800v, v gs = -5/+20v, i d = 20 a, r g(ext) = 2.5 , timing relative to v ds note: iec 60747-8-4, pg 83 resistive load fig. 24 t r(on) v sd fall time 90% to 10% 14 ns t d(off) turn-off delay time 22.4 ns t f(off) v sd rise time 10% to 90% 53 ns v sd diode forward voltage 1.5 1.7 v i f = 20 a, v gs = 0, t j = 25 ? c fig. 10 1.8 2.3 i f = 20 a, v gs = 0, t j = 150 ? c fig. 11 q c total capacitive charge 0.27 c i sd = 20 a, v ds = 800v di/dt = 1500 a/ s, v gs = -5v thermal characteristics symbol parameter min. typ. max. unit test conditions note r thjcm thermal resistance juction-to-case for mosfet 0.7 0.75 ?c/w fig. 27 r thjcd thermal resistance juction-to-case for diode 0.8 0.85 fig. 28 additional module data symbol condition max. unit test condition w weight 180 g m mounting torque 5.0 nm to heatsink and terminals clearance distance 14.09 mm terminal to terminal creepage distance 14.11 mm terminal to terminal 17.46 mm terminal to baseplate CCS020M12CM2,rev. -
3 typical performance 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 40 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v figure 2. output characteristics t j = 25 ? c figure 1. output characteristics t j = -40 ? c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (p.u.) junction temperature, t j ( c) conditions: i ds = 20 a v gs = 20 v t p < 200 s 0 10 20 30 40 50 60 0 1 2 3 4 5 6 7 8 9 10 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v figure 5. on-resistance vs. drain current for various temperatures figure 4. normalized on-resistance vs. temperature 0 50 100 150 200 250 0 10 20 30 40 50 60 on resistance, r ds on (mohms) drain - source current, i ds (a) conditions: v gs = 20 v t p < 200 s t j = 150 c t j = - 40 c t j = 25 c 0 20 40 60 80 100 120 140 160 180 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (mohms) junction temperature, t j ( c) conditions: i ds = 20 a t p < 200 s v gs = 20 v v gs = 18 v v gs = 16 v v gs = 14 v figure 6. on-resistance vs. temperature for various various gate-source voltages figure 3. output characteristics t j = 150 ? c CCS020M12CM2,rev. -
4 - 60 - 50 - 40 - 30 - 20 - 10 0 - 3.5 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = - 40 c t p < 200 s typical performance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 50 - 25 0 25 50 75 100 125 150 threshold voltage, v th (v) junction temperature t j ( c) conditons v ds = 10 v i ds = 1 ma 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 drain - source current, i ds (a) gate - source voltage, v gs (v) conditions: v ds = 20 v tp < 200 s t j = 150 c t j = - 40 c t j = 25 c - 60 - 50 - 40 - 30 - 20 - 10 0 - 3.5 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = 25 c t p < 200 s figure 8. transfer characteristic for various junction temperatures figure 10. diode characteristic at 25 ? c figure 9. diode characteristic at -40 ? c - 60 - 50 - 40 - 30 - 20 - 10 0 - 3.5 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = 150 c t p < 200 s - 60 - 50 - 40 - 30 - 20 - 10 0 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 40 c tp < 200 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v figure 12. 3 rd quadrant characteristic at -40 ? c figure 7. threshold voltage vs. temperature figure 11. diode characteristic at 150 ? c CCS020M12CM2,rev. -
5 - 5 0 5 10 15 20 25 0 10 20 30 40 50 60 70 gate - source voltage, v gs (v) gate charge, q g (nc) conditions: i ds = 20 a i gs = 100 ma v ds = 800 v t j = 25 c typical performance - 60 - 50 - 40 - 30 - 20 - 10 0 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 200 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v - 60 - 50 - 40 - 30 - 20 - 10 0 - 3.5 - 3.0 - 2.5 - 2.0 - 1.5 - 1.0 - 0.5 0.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 200 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v figure 14. 3 rd quadrant characteristic at 150 ? c 1 10 100 1000 10000 0 50 100 150 200 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss figure 13. 3 rd quadrant characteristic at 25 ? c 1 10 100 1000 10000 0 200 400 600 800 1000 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss 0 20 40 60 80 100 120 0 200 400 600 800 1000 1200 stored energy, e oss (j) drain to source voltage, v ds (v) figure 18. output capacitor stored energy figure 15. gate charge characteristics figure 16. capacitances vs. drain-source voltage (0 - 200 v) figure 17. capacitances vs. drain-source voltage (0 - 1 kv) CCS020M12CM2,rev. -
6 typical performance 0 0.05 0.1 0.15 0.2 0.25 0.3 0 5 10 15 20 25 30 35 40 45 switching energy (mj) drain to source current, i ds (a) conditions: t j = 25 c v dd = 600 v r g(ext) = 2.5 ? v gs = - 5/+20 v l = 412 h e off e on e total figure 19. inductive switching energy vs. drain current for v ds = 600v figure 20. inductive switching energy vs. drain current for v ds = 800v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 switching loss (mj) external gate resistor r g(ext) (ohms) e off e on e total conditions: t j = 25 c v dd = 800 v i ds = 20 a v gs = - 5/+20 v l = 412 h 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 30 35 40 45 switching energy (mj) drain to source current, i ds (a) conditions: t j = 25 c v dd = 800 v r g(ext) = 2.5 ? v gs = - 5/+20 v l = 412 h e off e on e total 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 25 50 75 100 125 150 175 swithcing loss (mj) junction temperature, t j ( c) conditions: i ds = 20 a v dd = 800 v r g(ext) = 2.5 ? v gs = - 5/+20 v l = 412 h e off e on e total figure 22. inductive switching energy vs. temperature figure 21. inductive switching energy vs. r g(ext) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 300 400 500 600 700 800 900 1000 switching loss (mj) drain to source voltage, v ds (v) e off e on e total conditions: t j = 25 c r g(ext) = 2.5 i ds = 20 a v gs = - 5/+20 v l = 412 h figure 23. inductive switching energy vs. v ds 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40 45 50 time (ns) external gate resistor, r g(ext) (ohms) conditions: t j = 25 c v dd = 800 v r l = 40 ? v gs = - 5/+20 v t d (off) t d (on) t f t r figure 24. timing vs. r g(ext) CCS020M12CM2,rev. -
7 typical performance figure 25. continuous drain current derating vs. case temperature figure 26. maximum power dissipation (mosfet) derating vs case temperature 1e - 3 10e - 3 100e - 3 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 10 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 0 20 40 60 80 100 120 140 160 180 - 40 - 20 0 20 40 60 80 100 120 140 maximum dissipated power, p tot (w) case temperature, t c ( c) conditions: t j 150 c 1e - 3 10e - 3 100e - 3 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 10 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse figure 28. diode junction to case thermal impedance figure 27. mosfet junction to case thermal impedance 10 100 1000 10000 100000 - 50 - 25 0 25 50 75 100 125 150 ntc resistance (ohms) ntc temperature ( c) figure 29. ntc resistance vs ntc temperature 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 drain - source current, i ds (a) drain - source voltage, v ds (v) 100 s 1 ms 10 s conditions: t c = 25 c d = 0, parameter: t p 100 ms limited by r ds on figure 30. mosfet safe operating area 0 5 10 15 20 25 30 35 40 45 50 - 40 - 20 0 20 40 60 80 100 120 140 drain - source continous current, i ds (dc) (a) case temperature, t c ( c) conditions: t j 150 c CCS020M12CM2,rev. -
8 ntc characteristics symbol condition typ. max. unit r 25 t c = 25 c 5 k delta r/r t c = 100 c, r 100 = 481 5 % p 25 t c = 25 c 20 mw b 25/50 r 2 = r 25 exp[b 25/50 (1/t 2 -1/(298.15k))] 3380 k b 25/80 r 2 = r 25 exp[b 25/80 (1/t 2 -1/(298.15k))] 3440 k figure 31. resistive switching time description CCS020M12CM2,rev. -
9 package dimensions (mm) CCS020M12CM2 schematic CCS020M12CM2,rev. -
module application note: the sic mosfet module switches at speeds beyond what is customarily associated with igbt based modules. therefore, special precautions are required to realize the best performance. the interconnection between the gate driver and module housing needs to be as short as possible. this will afford the best switching time and avoid the potential for device oscillation. also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive v ds overshoots. please refer to application note: design considerations when using cree sic modules part 1 and part 2. [cpwr-an12, cpwr-an13] 10 10 CCS020M12CM2 rev - copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems. notes
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